rej03g1937-0110 rev.1.10 page 1 of 6 may 21, 2010 preliminary datasheet rjk0364dpa-02 silicon n channel power mos fet power switching features ? high speed switching ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 5.3 m ? typ. (at v gs = 10 v) ? pb-free ? halogen-free outline renesas package code: pwsn0008dc-a (package name: wpak(2)) g d sss ddd 4 123 5678 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 876 5 2 1 34 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 35 a drain peak current i d(pulse) note1 140 a body-drain diode reverse drain current i dr 35 a avalanche current i ap note 2 15 a avalanche energy e ar note 2 22.5 mj channel dissipation pch note3 35 w channel to case thermal resistance ? ch-c note3 3.57 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c rej03g1937-0110 rev.1.10 may 21, 2010
rjk0364dpa-02 preliminary rej03g1937-0110 rev.1.10 page 2 of 6 may 21, 2010 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.2 ? 2.5 v v ds = 10 v, i d = 1 ma r ds(on) ? 5.3 7.1 m ? i d = 17.5 a, v gs = 10 v note4 static drain to source on state resistance r ds(on) ? 7.3 10.5 m ? i d = 17.5 a, v gs = 4.5 v note4 forward transfer admittance |y fs | ? 80 ? s i d = 17.5 a, v ds = 10 v note4 input capacitance ciss ? 1600 ? pf output capacitance coss ? 300 ? pf reverse transfer capacitance crss ? 100 ? pf v ds = 10 v v gs = 0 f = 1 mhz gate resistance rg ? 0.8 ? ? total gate charge qg ? 10 ? nc gate to source charge qgs ? 4.0 ? nc gate to drain charge qgd ? 2.2 ? nc v dd = 10 v v gs = 4.5 v i d = 35 a turn-on delay time t d(on) ? 5.8 ? ns rise time t r ? 4.5 ? ns turn-off delay time t d(off) ? 34.8 ? ns fall time t f ? 4.5 ? ns v gs = 10 v, i d = 17.5 a v dd ? 10 v r l = 0.57 ? rg = 4.7 ? body?drain diode forward voltage v df ? 0.88 1.14 v i f = 35 a, v gs = 0 note4 body?drain diode reverse recovery time t rr ? 20 ? ns i f =35 a, v gs = 0 di f / dt = 100 a/ ? s notes: 4. pulse test
rjk0364dpa-02 preliminary rej03g1937-0110 rev.1.10 page 3 of 6 may 21, 2010 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (mv) drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) typical transfer characteristics drain current i d (a) static drain to source on state resistance vs. drain current 50 40 30 20 10 0 246810 50 40 30 20 10 0 12 34 5 tc = 75 c 25c ?25c v ds = 10 v pulse test v gs = 2.6 v pulse test 10 3 1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 pulse test i d = 10 a 5 a 100 30 v gs = 4.5 v 10 v 2.8 v 3.0 v 10 v 3.2 v 4.5 v pulse test 2 a channel dissipation pch (w) case temperature tc (c) power vs. temperature derating 80 60 40 20 0 50 100 150 200 drain current i d (a) drain to source voltage v ds (v) maximum safe operation area 0.1 1 10 100 10 100 1000 1 0.1 dc operation pw = 10 ms 1 ms operation in this area is limited by r ds(on) tc = 25 c 1 shot pulse
rjk0364dpa-02 preliminary rej03g1937-0110 rev.1.10 page 4 of 6 may 21, 2010 case temperature tc ( c) static drain to source on state resistance vs. temperature 25 20 15 10 5 ?25 0 25 50 75 100 125 150 0 i d = 2 a, 5 a, 10 a v gs = 4.5 v 10 v pulse test 2 a, 5 a, 10 a channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 40 32 24 16 8 25 50 75 100 125 150 0 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 pulse test 5 v v gs = 0, ?5 v 10 v capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 01 0 30 20 10000 3000 1000 300 100 30 10 v gs = 0 f = 1 mhz crss coss ciss gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 50 40 30 20 10 0 20 16 12 8 4 10 20 30 40 50 0 0 i d = 35 a v gs v ds v dd = 25 v 10 v v dd = 25 v 10 v
rjk0364dpa-02 preliminary rej03g1937-0110 rev.1.10 page 5 of 6 may 21, 2010 d . u. t rg i ap monitor v ds monitor v dd 50 v in 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd ava lanche t est circuita v a lanche waveform pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) v in monitor d .u.t. v in 10 v r l v ds = 10 v t r t d(on) v in 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching ti me t est circuit switching ti me waveform rg 3 1 0.3 0.1 0.03 0.01 1 m 10 m100 m1 10 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse 10 100 tc = 25c p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 3.57c/w, tc = 25c
rjk0364dpa-02 preliminary rej03g1937-0110 rev.1.10 page 6 of 6 may 21, 2010 package dimensions 4.21typ 5.9 0.2typ 0.8max 6.1 1.27typ 0.7typ 0.04min +0.1 -0.2 +0.1 -0.3 1.27typ 0.05max 0min 0.545typ stand-off 5.1 0.2 4.90 0.1 0.5 0.15 3.6 0.2 0.5 0.15 0.4 0.06 3.9 0.2 pwsn0008dc-a wpak(2)v 0.07g mass[typ.] renesas code jeita package code previous code (ni/pd/au plating) notice:the reverse pattern of die-pad support lead described above exists. unit: mm package name wpak(2) ordering information part no. quantity shipping container RJK0364DPA-02-J0 2500 pcs taping
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